In-situ conditioning of Ge Nanowire enables direct observation of the evolution of band bending at the GeOx interface.

EBIC response of 100nm diameter germanium nanowire. Bandbending from surface traps at the GeOx interface depletes the nanowire leading to parallel conduction channels for electrons and holes. The above animation was the result of 11 scans after the Ge nanowire was subjected a series of voltage sweeps of increasing magnitude and imaged with out external fields applied.