Mighty EBIC 2.0

The scan controller and data acquisition interface is greatest factor to making quality quantitative EBIC measurements. Our system is ideal for conducting experiments on devices in situ with applications that go far beyond simply imaging defects and depletion regions. 

We have specifically designed the Mighty EBIC 2.0 to acquire smallest signal measurements. At the highest gain setting, we can achieve a current resolution of 0.76fA. Using 18 bit analog to digital converters means we have over 64 times the sensitivity of most other scan controllers and a much wider dynamic range of 108 dB at each gain setting of the pre-amplifier. 

With 8 imaging inputs that sample simultaneously with +-10V range we can collect signals
from secondary electrons (SE), backscattered electrons (BSE), and EBIC signals that are directly correlated in position without compromising our deterministic timing. We can interface directly to lock-in amplifiers and capture both amplitude and phase components.

We can scale the scan control voltage outputs to work with any SEM with an external scan controller interface. The imaging sampling size is only limited by system memory, 8000 x 8000 images and greater are possible. You can update regions of interest to measure only the data you want with the resolution you need using digital zoom.

There are two auxiliary voltage outputs with a range of +-10V for biasing , backgating or current- voltage sweeps to a device. 

SpecChartEBICPM

Technical Specifications

Scan Controller

Current Preamplifier

Max scan size 1

16,384 × 16,384

Variable Gain V/A

103 to 1011

X,Y (scalable)

± 1 V to ±10 V

Current Resolution

Dwell time

0.5 us to 100ms

Gain 1011

0.76 fA

Gain 108

7.6 pA

Analog input

Sample Holders

Input channels

8

Low profile chip carriers

Resolution

18 bits

Zero insertion force

Dynamic range

108 dB

Sample orientation

0- 90 degrees

Signal voltage range

±10 V

Oversampling (digital filter)

1-64

Coaxial Feedthrough

Sample averaging

1-100

Coaxial connector

SMA

Double sided

In-situ Biasing

Software

Outputs

2

Image formats

tiff, jpeg, png, pdf

Resolution

16 bits

Export formats

csv, hdf5, numpy

Voltage range

± 10V

Voltage step

300 uV

Select Installed Systems

National Renewable Energy Laboratory (JEOL 7600FESEM,  JEOL 5800 SEM)

Los Alamos National Laboratory (FEI Quanta)

Brookhaven National Laboratory (FEI Helios Nano Lab)

Temple University (FEI Quanta)

Drexel University (FEI DB235)

The Aerospace corporation (FEI DB235)

University of Utah (Hitachi S-4800 type2)

University California San Diego Nano3  (FEI Scios)

Argonne National Laboratory, Center for Electron Microscopy (FEI Quanta)

Texas A & M University of Central Texas (JEOL 7610F )

Honeywell FMT, Kansas City National Security Campus (Thermo Fischer Helios Nano Lab G3)

Institute of Physical Materials, Brno Czech Republic (Tescan Lyra 3)

Advanced Research Material Lab, Japan (Hitachi S-4800 type2)

Night Vision Laboratory, Fort Belvoir, Virginia (JEOL 7200F)

NEXGEN Power Systems, Syracuse NY (Thermo Fischer Helios NanoLab)

NIST Center for Nanoscale Science and Technology in Gaithersburg, MD (Zeiss Crossbeam 540)



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